Er3+ ions embedded in silica thin films co-doped by SnO2 nanocrystals are fabricated by sol-gel and spin coating methods. Uniformly distributed 4-nm SnO2 nanocrystals are fabricated, and the nanocrystals showed tetragonal rutile crystalline structures confirmed by transmission electron microscope and X-ray diffraction measurements. A strong characteristic emission located at 1.54 μm from the Er3+ ions is identified, and the influences of Sn doping concentrations on photoluminescence properties are systematically evaluated. The emission at 1.54 μm from Er3+ ions is enhanced by more than three orders of magnitude, which can be attributed to the effective energy transfer from the defect states of SnO2 nanocrystals to nearby Er3+ ions, as revealed by the selective excitation experiments.

采用等离子体化学气相沉积技术制备了两种不同非晶硅层厚度的氮化硅/氢化非晶硅/氮化硅三明治结构，研究了不同能量激光退火对薄膜晶化的影响。通过拉曼分析，发现在激光能量为320 mJ时，样品开始晶化，随着能量的提高晶化程度增加，在340 mJ时达到最大。根据拉曼晶化峰的偏移，计算得出硅量子点尺寸为2.8 nm和4.7 nm，表明三明治结构对形成的硅量子点的尺寸具有限制作用。设计并制备了基于该结构的电致发光器件，在偏压大于10 V时，在室温下可观测到电致发光。发现不同激光能量下晶化后的样品的电致发光强度不同，发光峰位在680 nm和720 nm附近。分析表明电致发光来源可以归结为电子空穴对在硅量子点中的辐射复合发光。